- 您现在的位置：买卖IC网 > Sheet目录512 > SI6404DQ-T1-GE3 (Vishay Siliconix)MOSFET N-CH 30V 8.6A 8TSSOP
Si6404DQ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 12 V
V DS = 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 70 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 11 A
0.6
20
0.0073
± 100
1
10
0.009
V
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 4.5 V, I D = 10 A
0.0084
0.010
Ω
V GS = 2.5 V, I D = 8.8 A
0.0116
0.014
Forward Transconductance a
g fs
V DS = 10 V, I D = 11 A
27
S
Diode Forward Voltage a
V SD
I S = 1.5 A, V GS = 0 V
0.72
1.1
V
Dynamic b
Total Gate Charge
Q g
32
48
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q gs
Q gd
R g
t d(on)
t r
V DS = 15 V, V GS = 4.5 V, I D = 11 A
V DD = 15 V, R L = 15 Ω
8.1
10
7.5
35
35
55
55
nC
Ω
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 4.5 V, R G = 6 Ω
I F = 1.5 A, di/dt = 100 A/μs
100
50
40
150
75
85
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
30
24
18
12
6
V GS = 10 thru 3 V
2V
30
24
18
12
6
T C = 125 °C
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71440
S-80682-Rev. B, 31-Mar-08
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI6413DQ-T1-E3
MOSFET P-CH 20V 7.2A 8TSSOP
SI6423DQ-T1-GE3
MOSFET P-CH 12V 8.2A 8-TSSOP
SI6466ADQ-T1-GE3
MOSFET N-CH 20V 6.8A 8TSSOP
SI6467BDQ-T1-GE3
MOSFET P-CH 12V 6.8A 8TSSOP
SI6924AEDQ-T1-GE3
MOSFET N-CH 28V ESD 8-TSSOP
SI6926ADQ-T1-GE3
MOSFET DL N-CH 20V 4.5A 8-TSSOP
SI6928DQ-T1-GE3
MOSFET DL N-CH 30V 4A 8-TSSOP
SI6933DQ-T1-GE3
MOSFET P-CH D-S 30V 8-TSSOP
相关代理商/技术参数
SI6405DQ
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI6410DQ
功能描述:MOSFET 30V/20V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6410DQ-T1
功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6410DQ-T1-E3
功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6410DQ-T1-GE3
功能描述:MOSFET 30V 7.8A 1.5W 14mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6413DQ
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI6413DQ-T1-E3
功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6413DQ-T1-GE3
功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube